STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 38 182,50

(exc. VAT)

R 43 910,00

(inc. VAT)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 7500R 15.273R 38,182.50
10000 +R 14.891R 37,227.50

*price indicative

RS stock no.:
188-8289
Mfr. Part No.:
STD5N80K5
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.73Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

60W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Height

2.17mm

Width

6.2 mm

Automotive Standard

No

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

Zener-protected

Applications

Switching applications

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