Infineon CoolMOS C3 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-220 SPP04N80C3XKSA1
- RS stock no.:
- 753-3197
- Mfr. Part No.:
- SPP04N80C3XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 73,55
(exc. VAT)
R 84,582
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 38 unit(s) ready to ship from another location
- Plus 246 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 36.775 | R 73.55 |
| 10 - 18 | R 35.855 | R 71.71 |
| 20 + | R 34.78 | R 69.56 |
*price indicative
- RS stock no.:
- 753-3197
- Mfr. Part No.:
- SPP04N80C3XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS C3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Distrelec Product Id | 304-35-448 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS C3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Distrelec Product Id 304-35-448 | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220AB SPP04N80C3XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin DPAK SPD04N80C3ATMA1
- Infineon CoolMOS™ N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R1K4P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1
- Infineon CoolMOS™ N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN95R2K0P7ATMA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 FP SPA08N80C3XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 SPA11N80C3XKSA1