Infineon CoolMOS C3 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-220 SPP04N80C3XKSA1
- RS stock no.:
- 753-3197
- Distrelec Article No.:
- 304-35-448
- Mfr. Part No.:
- SPP04N80C3XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 68,93
(exc. VAT)
R 79,27
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 10 unit(s) shipping from 23 March 2026
- Plus 122 unit(s) shipping from 30 March 2026
- Plus 500 unit(s) shipping from 25 March 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 34.465 | R 68.93 |
| 10 - 18 | R 33.605 | R 67.21 |
| 20 + | R 32.595 | R 65.19 |
*price indicative
- RS stock no.:
- 753-3197
- Distrelec Article No.:
- 304-35-448
- Mfr. Part No.:
- SPP04N80C3XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS C3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS C3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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