Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 157,31

(exc. VAT)

R 180,91

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 15.731R 157.31
50 - 90R 15.338R 153.38
100 - 490R 14.878R 148.78
500 - 990R 14.283R 142.83
1000 +R 13.712R 137.12

*price indicative

Packaging Options:
RS stock no.:
188-5117
Mfr. Part No.:
SiSS61DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

111.9A

Maximum Drain Source Voltage Vds

20V

Series

SiSS61DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

154nC

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

Distrelec Product Id

304-32-537

P-Channel 20 V (D-S) MOSFET.

TrenchFET® Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

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