Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

RS stock no.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

Bulk discount available

Subtotal (1 pack of 10 units)**

R 217 31

(exc. VAT)

R 249 91

(inc. VAT)

On back order for despatch 2025/11/29*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 40	R 21,731	R 217,31
50 - 90	R 21,188	R 211,88
100 - 490	R 20,552	R 205,52
500 - 990	R 19,73	R 197,30
1000 +	R 18,941	R 189,41

**price indicative

RS stock no.:: 188-5101
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Datasheet SQJ208EP-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A, 60 A
Maximum Drain Source Voltage	40 (Channel 1) V, 40 (Channel 2) V
Package Type	PowerPAK SO-8L Dual
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage	1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation	27 W, 48 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Width	4.47mm
Number of Elements per Chip	2
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Length	5mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Height	1.01mm

Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

FREE delivery for orders over R 1500

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