Vishay Dual TrenchFET 2 N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3

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RS stock no.:
188-4915
Mfr. Part No.:
SQJ208EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

0.77V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

48W

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

5mm

Standards/Approvals

No

Width

4.47mm

Height

1.01mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.

TrenchFET® power MOSFET

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