DiodesZetex DMP Type P-Channel MOSFET, 150 A, 20 V Enhancement, 8-Pin PowerDI5060 DMP2003UPS-13
- RS stock no.:
- 182-7343
- Mfr. Part No.:
- DMP2003UPS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 159,40
(exc. VAT)
R 183,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 6,740 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 15.94 | R 159.40 |
| 100 - 240 | R 15.542 | R 155.42 |
| 250 - 490 | R 15.076 | R 150.76 |
| 500 - 990 | R 14.473 | R 144.73 |
| 1000 + | R 13.894 | R 138.94 |
*price indicative
- RS stock no.:
- 182-7343
- Mfr. Part No.:
- DMP2003UPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerDI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 6mm | |
| Width | 5.1 mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerDI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 6mm | ||
Width 5.1 mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Application
Switch
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