DiodesZetex DMP Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerDI5060 DMP6050SPS-13
- RS stock no.:
- 182-7204
- Mfr. Part No.:
- DMP6050SPS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 229,625
(exc. VAT)
R 264,075
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,625 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | R 9.185 | R 229.63 |
| 250 - 475 | R 8.956 | R 223.90 |
| 500 - 975 | R 8.687 | R 217.18 |
| 1000 - 1475 | R 8.339 | R 208.48 |
| 1500 + | R 8.006 | R 200.15 |
*price indicative
- RS stock no.:
- 182-7204
- Mfr. Part No.:
- DMP6050SPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation 60V P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and loadswitch.
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. Green Device
Applications
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Related links
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