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Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1

RS stock no.:: 180-7932
Mfr. Part No.:: SI8483DB-T2-E1
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 178,85

(exc. VAT)

R 205,675

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 30 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 25	R 7.154	R 178.85
50 - 75	R 6.975	R 174.38
100 - 475	R 6.766	R 169.15
500 - 975	R 6.495	R 162.38
1000 +	R 6.235	R 155.88

*price indicative

RS stock no.:: 180-7932
Mfr. Part No.:: SI8483DB-T2-E1
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	MICRO FOOT
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	13W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	1 mm
	Height	0.59mm
	Length	1.5mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type MICRO FOOT
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 13W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 1 mm
	Height 0.59mm
	Length 1.5mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.

Low voltage drop

Low power consumption

Increased battery life

Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1

FREE delivery for orders over R 1,500.00

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