Vishay Si8489EDB Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- RS stock no.:
- 818-1438
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 202,08
(exc. VAT)
R 232,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 10.104 | R 202.08 |
| 300 - 580 | R 9.852 | R 197.04 |
| 600 - 1480 | R 9.556 | R 191.12 |
| 1500 - 2980 | R 9.174 | R 183.48 |
| 3000 + | R 8.807 | R 176.14 |
*price indicative
- RS stock no.:
- 818-1438
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Series | Si8489EDB | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1mm | |
| Height | 0.268mm | |
| Width | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Series Si8489EDB | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Length 1mm | ||
Height 0.268mm | ||
Width 1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT SI8416DB-T2-E1