MPN

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

RS stock no.:: 178-4558
Mfr. Part No.:: FDMC007N08LCDC
Manufacturer:: onsemi

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 313,13

(exc. VAT)

R 360,10

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 2,960 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 90	R 31.313	R 313.13
100 - 490	R 30.53	R 305.30
500 - 990	R 29.614	R 296.14
1000 +	R 28.429	R 284.29

*price indicative

RS stock no.:: 178-4558
Mfr. Part No.:: FDMC007N08LCDC
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	80V
	Series	FDMC
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	31nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	57W
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Width	3.4 mm
	Height	0.75mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 80V
	Series FDMC
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 31nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 57W
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Width 3.4 mm
	Height 0.75mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode

Shielded Gate MOSFET Technology

Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A

Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A

5 V Drive Capable

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

MSL1 robust package design

Dualcool capable package

Applications

Primary DC−DC MOSFET

Synchronous Rectifier in DC−DC and AC−DC

Motor Drive

Solar

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

FREE delivery for orders over R 1,500.00

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