Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- RS stock no.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 182,55
(exc. VAT)
R 209,93
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,560 unit(s) shipping from 18 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 18.255 | R 182.55 |
| 100 - 490 | R 17.799 | R 177.99 |
| 500 - 990 | R 17.265 | R 172.65 |
| 1000 + | R 16.574 | R 165.74 |
*price indicative
- RS stock no.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.38 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.38 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252
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- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
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