Vishay Siliconix TrenchFET Type N-Channel MOSFET, 75 A, 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- RS stock no.:
- 178-3916
- Mfr. Part No.:
- SQJA76EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 208,48
(exc. VAT)
R 239,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 20.848 | R 208.48 |
| 100 - 490 | R 20.327 | R 203.27 |
| 500 - 990 | R 19.717 | R 197.17 |
| 1000 + | R 18.928 | R 189.28 |
*price indicative
- RS stock no.:
- 178-3916
- Mfr. Part No.:
- SQJA76EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 66W | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 66W | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.07mm | ||
Length 5.99mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Related links
- Vishay Siliconix TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 150 V, 4-Pin PowerPAK SO-8L SQJ872EP-T1_GE3
- Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
- Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
- Vishay Siliconix TrenchFET P-Channel MOSFET 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3
- Vishay Siliconix TrenchFET P-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3
- Vishay Siliconix TrenchFET P-Channel MOSFET 80 V, 4-Pin PowerPAK SO-8L SQJ481EP-T1_GE3
- Vishay N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ146EP-T1_GE3