Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V Enhancement, 7-Pin TO-263 SQM40016EM_GE3
- RS stock no.:
- 178-3926
- Mfr. Part No.:
- SQM40016EM_GE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 127,82
(exc. VAT)
R 146,995
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 775 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 25.564 | R 127.82 |
| 50 - 95 | R 24.924 | R 124.62 |
| 100 - 495 | R 24.176 | R 120.88 |
| 500 + | R 23.208 | R 116.04 |
*price indicative
- RS stock no.:
- 178-3926
- Mfr. Part No.:
- SQM40016EM_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.001Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 245nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.83mm | |
| Height | 11.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.001Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 245nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals AEC-Q101 | ||
Width 4.83mm | ||
Height 11.3mm | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263 SQM40022EM_GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 250 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L