Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

RS stock no.:: 178-0834
Mfr. Part No.:: IRF830APBF
Manufacturer:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

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Subtotal (1 tube of 50 units)*

R 1 247,70

(exc. VAT)

R 1 434,85

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

600 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 +	R 24.954	R 1,247.70

*price indicative

RS stock no.:: 178-0834
Mfr. Part No.:: IRF830APBF
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF830A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Height	9.01mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IRF830A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Height 9.01mm
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRF830A Series Power MOSFET, 500V Maximum Drain Source Voltage, 5A Maximum Continuous Drain Current - IRF830APBF

This power MOSFET is a through-hole N-channel enhancement device designed for high-voltage switching in industrial electronics. It is intended for applications where robust drain-to-source voltage handling and moderate current capacity are required, providing a Compact solution for power switching on heatsinked assemblies.

Features and Benefits:

• 500V Vds enables high-voltage switching in industrial circuits • 5A continuous drain current supports steady load operation • 1.4Ω Rds(on) minimises conduction losses under load • 74W maximum power dissipation for effective thermal handling • 24nC typical gate charge allows predictable switching behaviour • Vgs ±30V rating protects gate under control-signal excursions

Applications

• Suitable for high-voltage motor drive front-ends • Ideal for switch-mode power supplies in industrial equipment • Used for power conversion modules requiring through-hole mounting • Can be used for relay-replacement switching in control panels

What mounting method is required for reliable heat removal?

The device is supplied in a TO-220AB package for through-hole installation and benefits from a heatsink attached to the tab to achieve rated power dissipation.

How does the gate charge affect switching performance?

A typical gate charge of 24nC at rated conditions determines required driver strength and influences switching losses and rise/fall times in high-speed applications.

What temperature range can it operate within?

The component is rated to function from -55°C up to 150°C, allowing use across harsh industrial thermal environments.

What protection should be considered for gate and drain overstress?

Designers should include gate protection to remain within ±30V and implement snubbing or clamp networks to limit transients on the drain at high voltages.