Toshiba Single 1 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K335R
- RS stock no.:
- 171-2542
- Mfr. Part No.:
- SSM3K335R
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 50 units)*
R 190,55
(exc. VAT)
R 219,15
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 3.811 | R 190.55 |
| 250 - 450 | R 3.716 | R 185.80 |
| 500 - 950 | R 3.605 | R 180.25 |
| 1000 + | R 3.461 | R 173.05 |
*price indicative
- RS stock no.:
- 171-2542
- Mfr. Part No.:
- SSM3K335R
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 0.7mm | |
| Length | 2.9mm | |
| Width | 1.8 mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 0.7mm | ||
Length 2.9mm | ||
Width 1.8 mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- TH
4.5-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
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