N-Channel MOSFET, 3.5 A, 100 V, 3-Pin SOT-23 Toshiba SSM3K361R,LF(B
- RS stock no.:
- 171-2403
- Mfr. Part No.:
- SSM3K361R,LF(B
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 reel of 3000 units)**
R 13 863 00
(exc. VAT)
R 15 942 00
(inc. VAT)
On back order for despatch 2025/07/10*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | R 4,621 | R 13 863,00 |
| 6000 - 6000 | R 4,506 | R 13 518,00 |
| 9000 + | R 4,37 | R 13 110,00 |
**price indicative
- RS stock no.:
- 171-2403
- Mfr. Part No.:
- SSM3K361R,LF(B
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 92 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 1.8mm | |
| Typical Gate Charge @ Vgs | 3.2 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.5V | |
| Height | 0.7mm | |
Select all | ||
|---|---|---|
Manufacturer Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 92 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 1.8mm | ||
Typical Gate Charge @ Vgs 3.2 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.5V | ||
Height 0.7mm | ||