Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 330,82

(exc. VAT)

R 380,44

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 70 unit(s) shipping from 29 December 2025
  • Plus 400 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90R 33.082R 330.82
100 - 240R 32.255R 322.55
250 - 490R 31.287R 312.87
500 - 990R 30.036R 300.36
1000 +R 28.835R 288.35

*price indicative

Packaging Options:
RS stock no.:
171-1945
Mfr. Part No.:
IPD200N15N3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Series

IPD200N15N3 G

Package Type

TO-252

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

4.57mm

Standards/Approvals

No

Length

10.36mm

Width

9.45 mm

Automotive Standard

No

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance

Worlds lowest R DS(on)

Related links