Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- RS stock no.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 238,70
(exc. VAT)
R 274,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 390 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 23.87 | R 238.70 |
| 100 - 240 | R 23.273 | R 232.73 |
| 250 - 490 | R 22.575 | R 225.75 |
| 500 - 990 | R 21.672 | R 216.72 |
| 1000 + | R 20.805 | R 208.05 |
*price indicative
- RS stock no.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | IPD200N15N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Width | 9.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series IPD200N15N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Width 9.45 mm | ||
Automotive Standard No | ||
The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.
Excellent switching performance
Worlds lowest R DS(on)
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