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    N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

    Subtotal (1 reel of 2500 units)**

    R  21 825 00

    (exc. VAT)

    R  25 100 00

    (inc. VAT)

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    On back order for despatch 2025/07/11*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Reel**
    2500 +R 8,73R 21 825,00

    **price indicative

    RS stock no.:
    170-2266
    Mfr. Part No.:
    IPD25CN10NGATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    35 A

    Maximum Drain Source Voltage

    100 V

    Package Type

    DPAK (TO-252)

    Series

    OptiMOS™ 2

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    26 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    71 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    20 V

    Width

    7.47mm

    Length

    6.73mm

    Maximum Operating Temperature

    +175 °C

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    23 nC @ 10 V

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.2V

    Height

    2.41mm

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