Infineon IPP075N15N3 G Type N-Channel MOSFET, 100 A, 150 V Enhancement, 4-Pin TO-220 IPP075N15N3GXKSA1
- RS stock no.:
- 170-2269
- Mfr. Part No.:
- IPP075N15N3GXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 587,90
(exc. VAT)
R 2 976,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 51.758 | R 2,587.90 |
| 100 - 200 | R 50.464 | R 2,523.20 |
| 250 + | R 48.95 | R 2,447.50 |
*price indicative
- RS stock no.:
- 170-2269
- Mfr. Part No.:
- IPP075N15N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | IPP075N15N3 G | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 11.17mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series IPP075N15N3 G | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 11.17mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Summary of Features:
Excellent switching performance
Worlds lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Halogen free
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
Related links
- Infineon IPP075N15N3 G Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-220
- Infineon IPD200N15N3 G Type N-Channel MOSFET 150 V Enhancement, 5-Pin TO-252
- Infineon IPD200N15N3 G Type N-Channel MOSFET 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IPB072N15N3GATMA1
- Infineon IPD25CN10N G Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252
- Infineon IPD25CN10N G Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1
- Infineon IPD053N08N3 G Type N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252
