Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC Infineon IRF7103TRPBF

RS stock no.:: 168-8757
Mfr. Part No.:: IRF7103TRPBF
Manufacturer:: Infineon

Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC Infineon IRF7103TRPBF

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Subtotal (1 reel of 4000 units)**

R 26 016 00

(exc. VAT)

R 29 920 00

(inc. VAT)

4000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Reel**
4000 +	R 6,504	R 26 016,00

**price indicative

RS stock no.:: 168-8757
Mfr. Part No.:: IRF7103TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

Is this MOSFET compatible with standard PCB layouts?

The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	50 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Length	5mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	12 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C