N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1

RS stock no.:: 168-7779
Mfr. Part No.:: TK58E06N1
Manufacturer:: Toshiba

N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1

Image representative of range

Subtotal (1 tube of 50 units)**

R 886 00

(exc. VAT)

R 1 019 00

(inc. VAT)

On back order for despatch 2025/07/24*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Tube**
50 +	R 17,72	R 886,00

**price indicative

RS stock no.:: 168-7779
Mfr. Part No.:: TK58E06N1
Manufacturer:: Toshiba

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	105 A
	Maximum Drain Source Voltage	60 V
	Series	TK
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	5.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	46 nC @ 10 V
	Length	10.16mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	4.45mm
	Height	15.1mm

	Select all
	Manufacturer Toshiba
	Channel Type N
	Maximum Continuous Drain Current 105 A
	Maximum Drain Source Voltage 60 V
	Series TK
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 5.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 46 nC @ 10 V
	Length 10.16mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 4.45mm
	Height 15.1mm

N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1

FREE delivery for orders over R 1500

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