Toshiba TK Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220 TK30E06N1
- RS stock no.:
- 168-7775
- Mfr. Part No.:
- TK30E06N1
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 595,90
(exc. VAT)
R 685,30
(inc. VAT)
Add 150 units to get free delivery
Temporarily out of stock
- 2,350 unit(s) shipping from 18 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 450 | R 11.918 | R 595.90 |
| 500 - 950 | R 11.62 | R 581.00 |
| 1000 - 2450 | R 11.272 | R 563.60 |
| 2500 - 4950 | R 10.821 | R 541.05 |
| 5000 + | R 10.388 | R 519.40 |
*price indicative
- RS stock no.:
- 168-7775
- Mfr. Part No.:
- TK30E06N1
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 53W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.16mm | |
| Width | 4.45 mm | |
| Height | 15.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 53W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.16mm | ||
Width 4.45 mm | ||
Height 15.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 TK58E06N1
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S