STMicroelectronics MDmesh Type N-Channel MOSFET, 6.5 A, 600 V Enhancement, 3-Pin TO-220 STF9NM60N
- RS stock no.:
- 168-7580
- Mfr. Part No.:
- STF9NM60N
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 078,05
(exc. VAT)
R 1 239,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 21.561 | R 1,078.05 |
| 250 - 1200 | R 21.022 | R 1,051.10 |
| 1250 - 2450 | R 20.391 | R 1,019.55 |
| 2500 - 4950 | R 19.576 | R 978.80 |
| 5000 + | R 18.793 | R 939.65 |
*price indicative
- RS stock no.:
- 168-7580
- Mfr. Part No.:
- STF9NM60N
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 745mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 17.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 745mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 17.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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