Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRFU024NPBF

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

• Maximum power dissipation of up to 45W for robust operation
• Low drain-source resistance of 75mΩ enhances energy efficiency
• Maximum gate threshold of 4V for improved performance
• Single transistor configuration simplifies design integration
• Designed for through-hole mounting in a TO-251 package for easy installation

• Used in power management systems for enhanced efficiency
• Ideal for high-frequency switching
• Suitable for automotive electronics ensuring consistent performance
• Employed in industrial automation for control systems
• Appropriate for telecommunications to maintain signal integrity

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.