Infineon DirectFET, HEXFET Type N-Channel MOSFET, 86 A, 60 V Enhancement, 4-Pin MN

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Subtotal (1 reel of 4800 units)*

R 72 316,80

(exc. VAT)

R 83 164,80

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +R 15.066R 72,316.80

*price indicative

RS stock no.:
168-5958
Mfr. Part No.:
IRF6648TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

60V

Series

DirectFET, HEXFET

Package Type

MN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.35mm

Height

0.5mm

Automotive Standard

No

COO (Country of Origin):
CN

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.

Industry lowest on-resistance in their respective footprints

Extremely low package resistance to minimise conduction losses

Highly efficient dual-sided cooling significantly improves power density, cost and reliability

Low profile of only 0.7mm

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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