Infineon Type N-Channel MOSFET, 375 A, 60 V Enhancement, 15-Pin DirectFET IRF7749L1TRPBF
- RS stock no.:
- 907-5205
- Mfr. Part No.:
- IRF7749L1TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 4 units)*
R 237,092
(exc. VAT)
R 272,656
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,832 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | R 59.273 | R 237.09 |
| 8 - 36 | R 57.79 | R 231.16 |
| 40 - 76 | R 56.058 | R 224.23 |
| 80 - 196 | R 53.815 | R 215.26 |
| 200 + | R 51.663 | R 206.65 |
*price indicative
- RS stock no.:
- 907-5205
- Mfr. Part No.:
- IRF7749L1TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.49mm | |
| Length | 9.15mm | |
| Width | 7.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.49mm | ||
Length 9.15mm | ||
Width 7.1 mm | ||
Automotive Standard No | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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