Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZS

Image representative of range

Stock information currently inaccessible
RS stock no.:
165-7623
Mfr. Part No.:
AUIRF3205ZS
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

11.3mm

Length

10.67mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy