Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262

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Subtotal (1 tube of 50 units)*

R 528,25

(exc. VAT)

R 607,50

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 100R 10.565R 528.25
150 - 200R 10.30R 515.00
250 +R 9.991R 499.55

*price indicative

RS stock no.:
214-4447
Mfr. Part No.:
IRF3205ZLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

170W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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