N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IRFR4105ZTRPBF

RS stock no.:: 165-5835
Mfr. Part No.:: IRFR4105ZTRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IRFR4105ZTRPBF

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Subtotal (1 reel of 2000 units)**

R 16 298 00

(exc. VAT)

R 18 742 00

(inc. VAT)

On back order for despatch 2025/05/20*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Reel**
2000 +	R 8,149	R 16 298,00

**price indicative

RS stock no.:: 165-5835
Mfr. Part No.:: IRFR4105ZTRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRFR4105ZTRPBF

This MOSFET is designed for high efficiency and reliability across a variety of electronic applications. It is essential for voltage regulation and switching, meeting the needs of automation, electronics, and electrical engineering sectors with its robust performance. The device's low on-resistance and ability to handle high continuous drain currents enable its use in demanding environments.

Features & Benefits

• Maximum continuous drain current of 30A ensures strong performance
• Operates at a maximum drain-source voltage of 55V for high voltage applications
• Low RDS(on) of 24.5mΩ improves energy efficiency
• Withstands temperature fluctuations up to +175°C
• Enhancement mode technology provides dependable switched operation
• DPAK TO-252 package allows for easy surface mounting

Applications

• Power management systems for effective voltage regulation
• Motor drivers and power converters in automation
• Switching power supplies and inverters
• Consumer electronics requiring efficient power control

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, allowing for optimal gate control in switching applications.

Can it handle high temperatures?

Yes, this MOSFET operates efficiently at temperatures ranging from -55°C to +175°C, suitable for challenging environments.

Is this MOSFET suitable for surface mounting?

Yes, it comes in a DPAK TO-252 package designed for straightforward surface mount integration.

How does it compare with other MOSFETs in terms of power dissipation?

The maximum power dissipation capacity is 48W, enabling it to manage substantial loads effectively.

What types of applications are most compatible with this component?

It is particularly effective in applications requiring high efficiency, including motor control, power converters, and electrical systems in automation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	24.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	18 nC @ 10 V
Number of Elements per Chip	1
Length	6.73mm
Maximum Operating Temperature	+175 °C
Width	6.22mm
Transistor Material	Si
Height	2.39mm
Minimum Operating Temperature	-55 °C