N-Channel MOSFET, 33 A, 80 V, 4-Pin LFPAK33 Nexperia BUK9M28-80EX
- RS stock no.:
- 153-0774
- Mfr. Part No.:
- BUK9M28-80EX
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)**
R 168 95
(exc. VAT)
R 194 30
(inc. VAT)
4475 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 25 - 100 | R 6,758 | R 168,95 |
| 125 - 225 | R 6,59 | R 164,75 |
| 250 - 600 | R 6,392 | R 159,80 |
| 625 - 1225 | R 6,136 | R 153,40 |
| 1250 + | R 5,891 | R 147,275 |
**price indicative
- RS stock no.:
- 153-0774
- Mfr. Part No.:
- BUK9M28-80EX
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | LFPAK33 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.45V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 15 V | |
| Width | 2.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.1 nC @ 10 V | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type LFPAK33 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 15 V | ||
Width 2.6mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.1 nC @ 10 V | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
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