Nexperia BUK9M5360E N-Channel MOSFET, 17 A, 60 V Enhancement, 4-Pin LFPAK BUK9M53-60EX
- RS stock no.:
- 153-1950
- Mfr. Part No.:
- BUK9M53-60EX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 226,85
(exc. VAT)
R 260,875
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 9.074 | R 226.85 |
| 125 - 225 | R 8.848 | R 221.20 |
| 250 - 600 | R 8.582 | R 214.55 |
| 625 - 1225 | R 8.239 | R 205.98 |
| 1250 + | R 7.909 | R 197.73 |
*price indicative
- RS stock no.:
- 153-1950
- Mfr. Part No.:
- BUK9M53-60EX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | BUK9M5360E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.9mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 2.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series BUK9M5360E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Operating Temperature 175°C | ||
Height 0.9mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 2.6mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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