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Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

RS stock no.:: 153-0664
Mfr. Part No.:: PMV50ENEAR
Manufacturer:: Nexperia

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 166,425

(exc. VAT)

R 191,40

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 08 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 225	R 6.657	R 166.43
250 - 600	R 6.49	R 162.25
625 - 1225	R 6.296	R 157.40
1250 - 2475	R 6.044	R 151.10
2500 +	R 5.802	R 145.05

*price indicative

RS stock no.:: 153-0664
Mfr. Part No.:: PMV50ENEAR
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	69mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	3.9W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1mm
	Length	3mm
	Width	1.4 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 69mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 3.9W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1mm
	Length 3mm
	Width 1.4 mm
	Automotive Standard AEC-Q101

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

FREE delivery for orders over R 1,500.00

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