Nexperia Type N-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23

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Bulk discount available

Subtotal (1 reel of 3000 units)*

R 6 588,00

(exc. VAT)

R 7 575,00

(inc. VAT)

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  • Shipping from 09 July 2026
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Units
Per unit
Per Reel*
3000 - 3000R 2.196R 6,588.00
6000 - 12000R 2.141R 6,423.00
15000 - 27000R 2.077R 6,231.00
30000 +R 1.994R 5,982.00

*price indicative

RS stock no.:
153-0729
Mfr. Part No.:
PMV100ENEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

118mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.6nC

Maximum Power Dissipation Pd

4.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3mm

Width

1.4 mm

Standards/Approvals

No

Height

1mm

Automotive Standard

AEC-Q101

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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