Nexperia Type N-Channel MOSFET, 5.5 A, 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR

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Subtotal (1 pack of 25 units)*

R 211,525

(exc. VAT)

R 243,25

(inc. VAT)

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  • Shipping from 17 December 2026
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Units
Per unit
Per Pack*
25 - 225R 8.461R 211.53
250 - 600R 8.25R 206.25
625 - 1225R 8.002R 200.05
1250 - 2475R 7.682R 192.05
2500 +R 7.375R 184.38

*price indicative

Packaging Options:
RS stock no.:
151-3122
Mfr. Part No.:
PMV25ENEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.94W

Maximum Operating Temperature

150°C

Length

3mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

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