ROHM SCT3022AL Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin TO-247 SCT3022ALGC11
- RS stock no.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 unit)*
R 1 269,28
(exc. VAT)
R 1 459,67
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | R 1,269.28 |
| 2 - 4 | R 1,237.55 |
| 5 - 9 | R 1,200.42 |
| 10 - 49 | R 1,152.40 |
| 50 + | R 1,106.30 |
*price indicative
- RS stock no.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SCT3022AL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.2V | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Power Dissipation Pd | 262W | |
| Maximum Operating Temperature | 175°C | |
| Length | 16mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SCT3022AL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.2V | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Power Dissipation Pd 262W | ||
Maximum Operating Temperature 175°C | ||
Length 16mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 21mm | ||
Automotive Standard No | ||
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant
Related links
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R015M2HXKSA1
- ROHM SiC N-Channel MOSFET 650 V, 3-Pin TO-247N SCT3120ALGC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2280KEHRC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2160KEHRC11
- ROHM SiC N-Channel MOSFET 750 V, 3-Pin TO-247N SCT4013DEC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2280KEGC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2450KEGC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2450KEHRC11