ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 R6020ENZ1C9
- RS stock no.:
- 148-6971P
- Mfr. Part No.:
- R6020ENZ1C9
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionSubtotal 10 units (supplied in a tube)*
R 522,86
(exc. VAT)
R 601,29
(inc. VAT)
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Units | Per unit |
|---|---|
| 10 - 20 | R 52.286 |
| 25 - 45 | R 50.718 |
| 50 - 245 | R 48.69 |
| 250 + | R 46.742 |
*price indicative
- RS stock no.:
- 148-6971P
- Mfr. Part No.:
- R6020ENZ1C9
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5.21mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 21.34mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5.21mm | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.5V | ||
Height 21.34mm | ||
Low on-resistance
Fast switching speed
Gate-source voltage(VGSS)guaranteed to be ±30V
Drive circuits can be simple
Parallel use is easy
Pb-free lead plating, RoHS compliant
Fast switching speed
Gate-source voltage(VGSS)guaranteed to be ±30V
Drive circuits can be simple
Parallel use is easy
Pb-free lead plating, RoHS compliant
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