STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 103-1991
- Mfr. Part No.:
- STW26NM60N
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 975,44
(exc. VAT)
R 2 271,75
(inc. VAT)
Add 30 units to get free delivery
In Stock
- 600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 65.848 | R 1,975.44 |
| 60 - 90 | R 64.202 | R 1,926.06 |
| 120 - 270 | R 62.276 | R 1,868.28 |
| 300 - 570 | R 59.785 | R 1,793.55 |
| 600 + | R 57.393 | R 1,721.79 |
*price indicative
- RS stock no.:
- 103-1991
- Mfr. Part No.:
- STW26NM60N
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 15.75mm | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247