DiodesZetex Dual DMP 2 Type P-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DI5060 DMPH6050SPD-13
- RS stock no.:
- 146-4820
- Mfr. Part No.:
- DMPH6050SPD-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 179,91
(exc. VAT)
R 206,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.991 | R 179.91 |
| 50 - 90 | R 17.541 | R 175.41 |
| 100 - 490 | R 17.015 | R 170.15 |
| 500 - 990 | R 16.334 | R 163.34 |
| 1000 + | R 15.681 | R 156.81 |
*price indicative
- RS stock no.:
- 146-4820
- Mfr. Part No.:
- DMPH6050SPD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | -0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf -0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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