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IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV

RS stock no.:: 146-4235
Mfr. Part No.:: IXFT60N65X2HV
Manufacturer:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV

Image representative of range

Bulk discount available

Subtotal (1 tube of 30 units)*

R 4 149,18

(exc. VAT)

R 4 771,56

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 04 January 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 - 90	R 138.306	R 4,149.18
120 - 270	R 134.848	R 4,045.44
300 - 570	R 130.803	R 3,924.09
600 - 870	R 125.571	R 3,767.13
900 +	R 120.548	R 3,616.44

*price indicative

RS stock no.:: 146-4235
Mfr. Part No.:: IXFT60N65X2HV
Manufacturer:: IXYS

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-268
	Series	HiperFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	780W
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Length	16.05mm
	Width	15.15 mm
	Height	5.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand IXYS
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-268
	Series HiperFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 780W
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Length 16.05mm
	Width 15.15 mm
	Height 5.1mm
	Standards/Approvals No
	Automotive Standard No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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Unmanned Aerial Vehicles (UAVs)

Higher eﬃciency

High power density

Easy to mount

Space savings

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV

FREE delivery for orders over R 1,500.00

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