IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 4 638,33

(exc. VAT)

R 5 334,09

(inc. VAT)

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In Stock
  • 270 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 90R 154.611R 4,638.33
120 - 270R 150.746R 4,522.38
300 - 570R 146.223R 4,386.69
600 - 870R 140.374R 4,211.22
900 +R 134.759R 4,042.77

*price indicative

RS stock no.:
146-4234
Mfr. Part No.:
IXFH60N65X2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

HiperFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

108nC

Maximum Power Dissipation Pd

780W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.34mm

Width

5.21 mm

Length

16.13mm

Automotive Standard

No

Low R and Q

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

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