IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2
- RS stock no.:
- 146-4234
- Mfr. Part No.:
- IXFH60N65X2
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 4 510,92
(exc. VAT)
R 5 187,57
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 270 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 150.364 | R 4,510.92 |
| 120 - 270 | R 146.605 | R 4,398.15 |
| 300 - 570 | R 142.207 | R 4,266.21 |
| 600 - 870 | R 136.519 | R 4,095.57 |
| 900 + | R 131.058 | R 3,931.74 |
*price indicative
- RS stock no.:
- 146-4234
- Mfr. Part No.:
- IXFH60N65X2
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | HiperFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.34mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series HiperFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 21.34mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
Low R and Q
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Related links
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- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN170N65X2