IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2

Bulk discount available

Subtotal (1 tube of 30 units)*

R 5 589,30

(exc. VAT)

R 6 427,80

(inc. VAT)

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Temporarily out of stock
  • Shipping from 17 May 2027
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Units
Per unit
Per Tube*
30 - 90R 186.31R 5,589.30
120 - 270R 181.652R 5,449.56
300 - 570R 176.202R 5,286.06
600 - 870R 169.154R 5,074.62
900 +R 162.388R 4,871.64

*price indicative

RS stock no.:
146-4236
Distrelec Article No.:
304-30-535
Mfr. Part No.:
IXFH80N65X2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

HiperFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

140nC

Maximum Power Dissipation Pd

890W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.34mm

Length

16.13mm

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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Higher efficiency

High power density

Easy to mount

Space savings

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