N-Channel MOSFET, 5.3 A, 500 V, 3-Pin TO-220FP Vishay SIHF5N50D-E3
- RS stock no.:
- 145-1658
- Mfr. Part No.:
- SIHF5N50D-E3
- Manufacturer:
- Vishay
Subtotal (1 tube of 50 units)**
R 1 017 75
(exc. VAT)
R 1 170 40
(inc. VAT)
150 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Tube** |
|---|---|---|
| 50 + | R 20,355 | R 1 017,75 |
**price indicative
- RS stock no.:
- 145-1658
- Mfr. Part No.:
- SIHF5N50D-E3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.3 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-220FP | |
| Series | D Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Length | 10.63mm | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.8mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-220FP | ||
Series D Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Length 10.63mm | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.8mm | ||
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