Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3
- RS stock no.:
- 134-9723
- Mfr. Part No.:
- SIR632DP-T1-RE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 104,50
(exc. VAT)
R 120,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 285 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | R 20.90 | R 104.50 |
| 200 - 395 | R 20.378 | R 101.89 |
| 400 - 745 | R 19.766 | R 98.83 |
| 750 + | R 18.976 | R 94.88 |
*price indicative
- RS stock no.:
- 134-9723
- Mfr. Part No.:
- SIR632DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | SiR632DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series SiR632DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
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