Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 101,37

(exc. VAT)

R 116,575

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 195R 20.274R 101.37
200 - 395R 19.768R 98.84
400 - 745R 19.174R 95.87
750 +R 18.408R 92.04

*price indicative

Packaging Options:
RS stock no.:
134-9723
Mfr. Part No.:
SIR632DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

SiR632DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

69.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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