Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 101,64

(exc. VAT)

R 116,885

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 195R 20.328R 101.64
200 - 395R 19.82R 99.10
400 - 745R 19.226R 96.13
750 +R 18.456R 92.28

*price indicative

Packaging Options:
RS stock no.:
134-9723
Mfr. Part No.:
SIR632DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Series

SiR632DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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