Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

R 57,75

(exc. VAT)

R 66,41

(inc. VAT)

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1 - 9R 57.75
10 - 24R 56.31
25 - 99R 54.62
100 - 499R 52.44
500 +R 50.34

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RS stock no.:
653-131
Mfr. Part No.:
SIRS5702DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK

Series

SIRS5702DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0072Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44nC

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Width

5.10 mm

Standards/Approvals

No

Length

6.10mm

Height

0.95mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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