DiodesZetex DMG2302UK N-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 DMG2302UK-7
- RS stock no.:
- 133-3362
- Mfr. Part No.:
- DMG2302UK-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 221,80
(exc. VAT)
R 255,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 500 unit(s) ready to ship from another location
- Plus 13,700 unit(s) shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 2.218 | R 221.80 |
| 500 - 900 | R 2.163 | R 216.30 |
| 1000 - 1900 | R 2.098 | R 209.80 |
| 2000 - 2900 | R 2.014 | R 201.40 |
| 3000 + | R 1.933 | R 193.30 |
*price indicative
- RS stock no.:
- 133-3362
- Mfr. Part No.:
- DMG2302UK-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMG2302UK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMG2302UK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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