Toshiba U-MOSVIII-H Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin SOP TPH11006NL,LQ(S
- RS stock no.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 131,90
(exc. VAT)
R 151,68
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 980 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 6.595 | R 131.90 |
| 100 - 180 | R 6.43 | R 128.60 |
| 200 - 980 | R 6.237 | R 124.74 |
| 1000 - 1980 | R 5.988 | R 119.76 |
| 2000 + | R 5.748 | R 114.96 |
*price indicative
- RS stock no.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | U-MOSVIII-H | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Width | 5 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series U-MOSVIII-H | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Width 5 mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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