Infineon DirectFET Type N-Channel MOSFET, 198 A, 40 V Enhancement, 4-Pin MX IRF7946TRPBF
- RS stock no.:
- 130-0965
- Mfr. Part No.:
- IRF7946TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 85,12
(exc. VAT)
R 97,88
(inc. VAT)
Add 38 units to get free delivery
In Stock
- Plus 54 unit(s) shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 42.56 | R 85.12 |
| 10 - 98 | R 41.495 | R 82.99 |
| 100 - 498 | R 40.25 | R 80.50 |
| 500 - 998 | R 38.64 | R 77.28 |
| 1000 + | R 37.095 | R 74.19 |
*price indicative
- RS stock no.:
- 130-0965
- Mfr. Part No.:
- IRF7946TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DirectFET | |
| Package Type | MX | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 141nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.05 mm | |
| Height | 0.53mm | |
| Length | 6.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DirectFET | ||
Package Type MX | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 141nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.05 mm | ||
Height 0.53mm | ||
Length 6.35mm | ||
Automotive Standard No | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness Ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon DirectFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin MX
- Infineon DirectFET Type N-Channel MOSFET 40 V DirectFET
- Infineon DirectFET Type N-Channel MOSFET 100 V, 3-Pin DirectFET
- Infineon DirectFET Type N-Channel MOSFET 40 V DirectFET IRF7739L1TRPBF
- Infineon DirectFET Type N-Channel MOSFET 100 V, 3-Pin DirectFET IRF6645TRPBF
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 9-Pin DirectFET AUIRF7648M2TR
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR