onsemi N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 2N7002ET
- RS stock no.:
- 124-9944
- Mfr. Part No.:
- 2N7002ET
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 1 281,00
(exc. VAT)
R 1 473,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 0.427 | R 1,281.00 |
| 6000 - 12000 | R 0.418 | R 1,254.00 |
| 15000 - 27000 | R 0.406 | R 1,218.00 |
| 30000 - 57000 | R 0.39 | R 1,170.00 |
| 60000 + | R 0.374 | R 1,122.00 |
*price indicative
- RS stock no.:
- 124-9944
- Mfr. Part No.:
- 2N7002ET
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 0.81 nC @ 5 V | |
| Width | 1.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 0.81 nC @ 5 V | ||
Width 1.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
- COO (Country of Origin):
- CZ
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