onsemi NTR5103N Type N-Channel MOSFET, 260 mA, 60 V Enhancement, 3-Pin SOT-23 NTR5103NT1G
- RS stock no.:
- 184-1331
- Mfr. Part No.:
- NTR5103NT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 250 units)*
R 223,00
(exc. VAT)
R 256,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8,250 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 250 - 250 | R 0.892 | R 223.00 |
| 500 - 750 | R 0.87 | R 217.50 |
| 1000 - 1750 | R 0.843 | R 210.75 |
| 2000 + | R 0.81 | R 202.50 |
*price indicative
- RS stock no.:
- 184-1331
- Mfr. Part No.:
- NTR5103NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTR5103N | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.81nC | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTR5103N | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.81nC | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Small Signal MOSFET:60 V, 310 mA, Single, N−Channel, SOT−23
Low RDS(on)
SOT-23 - Small Footprint Surface Mount Package
Improve Efficiency
Industry Standard Package
Applications:
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Related links
- onsemi NTR5103N Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002ET
- Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET 60 V Enhancement, 8-Pin DFN
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- DiodesZetex Type N-Channel MOSFET 240 V Enhancement, 3-Pin E-Line
- DiodesZetex Type N-Channel MOSFET 240 V Enhancement, 3-Pin E-Line ZVN4424A
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
