DiodesZetex Type P-Channel MOSFET, 3.7 A, 40 V Enhancement, 6-Pin SOT-26 ZXMP4A57E6TA
- RS stock no.:
- 823-3160
- Mfr. Part No.:
- ZXMP4A57E6TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 168,075
(exc. VAT)
R 193,275
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,200 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 6.723 | R 168.08 |
| 125 - 350 | R 6.555 | R 163.88 |
| 375 - 1475 | R 6.358 | R 158.95 |
| 1500 - 2975 | R 6.104 | R 152.60 |
| 3000 + | R 5.86 | R 146.50 |
*price indicative
- RS stock no.:
- 823-3160
- Mfr. Part No.:
- ZXMP4A57E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.8nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.95V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.8nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.95V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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